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Device characterization of Dy-incorporated HfO2 gate oxide nMOS device: Device characteristics and reliability of DyO/HfO gate dielectrics and the application to NAND Flash memory
Brand : LAP Lambert Academic Publishing, Binding : Taschenbuch, Label : LAP LAMBERT Academic Publishing, Publisher : LAP LAMBERT Academic Publishing, medium : Taschenbuch, numberOfPages : 136, publicationDate : 2011-05-13, authors : Tackhwi Lee, ISBN : 3844393420
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